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The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLSs). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss from bulk substrates plays an important role. However, a microscopic understanding of dielectric loss in crystalline substrates is still lacking. In this work, we show that boron acceptors in silicon constitute a TLS bath that leads to an energy dissipation channel for superconducting circuits. We discuss how the electronic structure of boron acceptors leads to an effective TLS response in silicon. We sweep the boron concentration in silicon and demonstrate the bulk dielectric loss limit from boron acceptors. We show that boron-induced dielectric loss can be reduced in a magnetic field due to the spin-orbit structure of boron. This work provides the first detailed microscopic description of a TLS bath for superconducting circuits and demonstrates the need for ultrahigh-purity substrates for next-generation superconducting quantum processors. Published by the American Physical Society2024 

Abstract Silicon is the ideal material for building electronic and photonic circuits at scale. Integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources and strong photon-photon interactions in silicon poses a challenge to scalability. In this work, we demonstrate an indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source single photons suitable for photonic quantum networks and processors. 

Abstract Embedding tunable quantum emitters in a photonic bandgap structure enables control of dissipative and dispersive interactions between emitters and their photonic bath. Operation in the transmission band, outside the gap, allows for studying waveguide quantum electrodynamics in the slow-light regime. Alternatively, tuning the emitter into the bandgap results in finite-range emitter–emitter interactions via bound photonic states. Here, we couple a transmon qubit to a superconducting metamaterial with a deep sub-wavelength lattice constant (λ/60). The metamaterial is formed by periodically loading a transmission line with compact, low-loss, low-disorder lumped-element microwave resonators. Tuning the qubit frequency in the vicinity of a band-edge with a group index ofn_g = 450, we observe an anomalous Lamb shift of −28 MHz accompanied by a 24-fold enhancement in the qubit lifetime. In addition, we demonstrate selective enhancement and inhibition of spontaneous emission of different transmon transitions, which provide simultaneous access to short-lived radiatively damped and long-lived metastable qubit states.